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Other articles related with "analytical model"：
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45204 |
Bo Yu(余波), Tianxuan Huang(黄天晅), Li Yao(姚立), Chuankui Sun(孙传奎), Wanli Shang(尚万里), Peng Wang(王鹏), Xiaoshi Peng(彭晓世), Qi Tang(唐琦), Zifeng Song(宋仔峰), Wei Jiang(蒋炜), Zhongjing Chen(陈忠靖), Yudong Pu(蒲昱东), Ji Yan(晏骥), Yunsong Dong(董云松), Jiamin Yang(杨家敏), Yongkun Ding(丁永坤), and Jian Zheng(郑坚) |
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A simple analytical model of laser direct-drive thin shell target implosion |
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Chin. Phys. B
2022 Vol.31 (4): 45204-045204
[Abstract]
(364)
[HTML 0 KB]
[PDF 1092 KB]
(63)
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47102 |
Yi-Ni He(何伊妮), Lian-Wen Deng(邓联文), Ting Qin(覃婷), Cong-Wei Liao(廖聪维), Heng Luo(罗衡), Sheng-Xiang Huang(黄生祥) |
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Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates |
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Chin. Phys. B
2020 Vol.29 (4): 47102-047102
[Abstract]
(634)
[HTML 1 KB]
[PDF 630 KB]
(149)
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30301 |
Bing-Hua Cao(曹丙花), Chao Li(李超), Meng-Bao Fan(范孟豹), Bo Ye(叶波), Gui-Yun Tian(田贵云) |
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Analytical model of tilted driver-pickup coils for eddy current nondestructive evaluation |
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Chin. Phys. B
2018 Vol.27 (3): 30301-030301
[Abstract]
(725)
[HTML 1 KB]
[PDF 700 KB]
(242)
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113701 |
Jian Zhang(张见), Shuming Chen(陈书明), Yaohua Wang(王耀华) |
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Semi-analytical model for quasi-double-layer surface electrode ion traps |
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Chin. Phys. B
2016 Vol.25 (11): 113701-113701
[Abstract]
(590)
[HTML 1 KB]
[PDF 425 KB]
(234)
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27305 |
Yu-Ru Wang(王裕如), Yi-He Liu(刘祎鹤), Zhao-Jiang Lin(林兆江), Dong Fang(方冬), Cheng-Zhou Li(李成州), Ming Qiao(乔明), Bo Zhang(张波) |
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Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance |
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Chin. Phys. B
2016 Vol.25 (2): 27305-027305
[Abstract]
(773)
[HTML 1 KB]
[PDF 379 KB]
(380)
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124215 |
Cao Chen (曹琛), Zhang Bing (张冰), Wu Long-Sheng (吴龙胜), Li Na (李娜), Wang Jun-Feng (王俊峰) |
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A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure |
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Chin. Phys. B
2014 Vol.23 (12): 124215-124215
[Abstract]
(603)
[HTML 1 KB]
[PDF 594 KB]
(482)
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87305 |
Mao Wei (毛维), She Wei-Bo (佘伟波), Yang Cui (杨翠), Zhang Chao (张超), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Zhang Jin-Feng (张金风), Liu Hong-Xia (刘红侠), Yang Lin-An (杨林安), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Chen Yong-He (陈永和), Zheng Xue-Feng (郑雪峰), Hao Yue (郝跃) |
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A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor |
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Chin. Phys. B
2014 Vol.23 (8): 87305-087305
[Abstract]
(544)
[HTML 1 KB]
[PDF 1948 KB]
(525)
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38502 |
Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚) |
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A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs |
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Chin. Phys. B
2014 Vol.23 (3): 38502-038502
[Abstract]
(475)
[HTML 1 KB]
[PDF 514 KB]
(491)
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18501 |
Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚) |
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Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate |
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Chin. Phys. B
2014 Vol.23 (1): 18501-018501
[Abstract]
(543)
[HTML 1 KB]
[PDF 358 KB]
(552)
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48501 |
Li Cong(李聪), Zhuang Yi-Qi(庄奕琪), Zhang Li(张丽), and Bao Jun-Lin(包军林) |
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Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-$\kappa$ gate dielectric |
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Chin. Phys. B
2012 Vol.21 (4): 48501-048501
[Abstract]
(1176)
[HTML 1 KB]
[PDF 634 KB]
(559)
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